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Talos F200S型场发射高分辨透射电子显微镜

作者:        发布于:2018-05-24
测试中心册子11.30_页面_06_图像_0004.jpg
 型号: Talos F200S

生产国别厂家:美国Thermo Fisher 公司(原荷兰FEI 公司)

主要技术指标:

1、电子枪加速电压:20-200kV

2、最小束斑尺寸 0.3nm

3TEM点分辨率0.25nm,信息分辨率0.12nmSTEM分辨率0.16nm

4、放大倍数:TEM25 - 1.05M倍;STEM150 - 230M

5EDS能量分辨率≤136 eV (Mn-Ka)

 

基本原理:利用高能电子束照射厚度不超过100纳米的薄的样品,电子与样品中的原子碰撞而改变方向,由于样品厚度、元素组成、晶体结构和缺陷等的不同,透过样品的电子会产生不同的花样或图像衬度,这些花样或图像包含了样品微观形貌结构的相关信息。

 

主要用途:主要用于材料在纳米及原子尺度的微观形貌、结构、缺陷和界面的研究,材料微区成分的定性和定量分析,以及纳米材料显微结构的三维表征。

 

Model:  Talos F200S

Manufacturer:  Thermo Fisher, USA

Main Specifications:

1.     Electronic gun accelerate voltage range: 20~200KV

2.     Minimum spot size: 0.3nm

3.     TEM Point Resolution: 0.25nm,TEM information resolution: 0.12nm, STEM resolution: 0.16nm

4.     TEM magnification range: 25~1.05Mx, STEM magnification range: 150~230Mx

5.     X-ray energy resolution on EDS≤136 eV (Mn-Ka)

 

Principle:  High-狗万提款流程energy electron beam irradiate thin specimen (thickness no more than 100nm). Electrons collide with atoms of specimen and change directions. For the reason that different specimens have different thickness, element compositions, lattice structure and defects, transmitted electrons will generate different patterns or image contrasts, which contain specimen’s microstructure information and micromorphology information.

 

Main Application: This machine can characterize materials’ micromorphology, microstructure, lattice defects, crystal interfaces and phase interfaces in nanoscale level and atomic level, can analyze materials’ micro-area chemical composition qualitatively or quantitatively, and can simulate material’s microstructure by using 3D tomography technology. 

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